Polarization Doping in a GaN-InN System—Ab Initio Simulation
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DOI: 10.3390/ma16031227
Abstract: Polarization doping in a GaN-InN system with a graded composition layer was studied using ab initio simulations. The electric charge volume density in the graded concentration part was determined by spatial potential dependence. The emerging… read more here.
Keywords: inn system; polarization doping; polarization; gan inn ... See more keywords