Modeling and Characterization of Coaxial Through-Silicon Via With Electrically Floating Inner Silicon
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DOI: 10.1109/tcpmt.2017.2678203
Abstract: In this paper, coaxial through-silicon via (C-TSV) is modeled and studied with the consideration of electrically floating inner silicon substrate. Nonlinear capacitances of the central via and the outer shielding shell are accurately captured by… read more here.
Keywords: inner silicon; silicon via; coaxial silicon; floating inner ... See more keywords