Optimizing Annealing Process for Ferroelectric Y‐Doped HfO2 Thin Films by All‐Inorganic Aqueous Precursor Solution
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DOI: 10.1002/aelm.202000585
Abstract: 10 nm thick yttrium doped HfO2 (Y:HfO2) thin films are prepared on Si (100) substrates by the chemical solution deposition method using all‐inorganic aqueous salt precursors. The influence of the annealing process, consisting of annealing… read more here.
Keywords: thin films; hfo2 thin; doped hfo2; inorganic aqueous ... See more keywords