Origin of large dark current increase in InGaAs/InP avalanche photodiode
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.4999646
Abstract: The large dark current increase near the breakdown voltage of an InGaAs/InP avalanche photodiode is observed and analyzed from the aspect of bulk defects in the device materials. The trap level information is extracted from… read more here.
Keywords: inp avalanche; dark current; large dark; current increase ... See more keywords
Effects of multiplication layers on dark current components of InGaAs/InP avalanche photodiodes.
Sign Up to like & getrecommendations! Published in 2019 at "Applied optics"
DOI: 10.1364/ao.58.005339
Abstract: Based on results from the Silvaco Atlas device simulation software, a separate absorption grading charge multiplication InGaAs/InP avalanche photodiode has been modeled. The Shockley-Read-Hall current, avalanche amplification current, trap-assisted tunneling current, and band-to-band direct tunneling… read more here.
Keywords: dark current; inp avalanche; current components; multiplication ... See more keywords
Guard Ring Design to Prevent Edge Breakdown in Double-Diffused Planar InGaAs/InP Avalanche Photodiodes
Sign Up to like & getrecommendations! Published in 2023 at "Materials"
DOI: 10.3390/ma16041667
Abstract: We report on the design of an attached guard ring (AGR) and a floating guard ring (FGR) in a planar separate absorption, grading, charge, and multiplication In0.53Ga0.47As/InP avalanche photodiode to prevent premature edge breakdowns. The… read more here.
Keywords: design; inp avalanche; prevent; guard ring ... See more keywords