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Published in 2021 at "Inorganic chemistry"
DOI: 10.1021/acs.inorgchem.1c00304
Abstract: Low-toxic InP quantum dots (QDs) as an ideal candidate for Cd-based QDs have tremendous potential for next-generation commercial display and biological detection applications. However, the progress in biological detection is still far behind that of…
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Keywords:
detection;
inp;
silica;
qds ... See more keywords
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Published in 2018 at "Journal of Physical Chemistry C"
DOI: 10.1021/acs.jpcc.7b11327
Abstract: InP based quantum dots (QDs) are coming in a big way as an alternative to toxic Cd, or Pb based QDs. Unlike many literature reports in this work, green-yellow-orange-red emitting highly photoluminescent (PLQY as high…
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Keywords:
highly photoluminescent;
core alloy;
qds;
inp based ... See more keywords
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Published in 2019 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.9b07437
Abstract: Due to the inherent toxicity of cadmium selenide (CdSe)-based quantum dots (QDs), Cd-free alternatives are being widely investigated. Indium phosphide (InP) QDs have shown a great potential as a replacement for CdSe QDs in display…
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Keywords:
inp;
efficiency inp;
inp based;
based red ... See more keywords
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Published in 2020 at "ACS Applied Nano Materials"
DOI: 10.1021/acsanm.0c00008
Abstract: Indium phosphide (InP) has been regarded as the most promising composition of visible quantum dot (QD) emitters for the application to next-generation display devices primarily because of its envir...
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Keywords:
display devices;
inp based;
composition;
shell ... See more keywords
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Published in 2022 at "ACS nano"
DOI: 10.1021/acsnano.2c03138
Abstract: Photoluminescent color conversion by quantum dots (QDs) makes possible the formation of spectrum-on-demand light sources by combining blue LEDs with the light generated by a specific blend of QDs. Such applications, however, require a near-unity…
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Keywords:
quantum efficiency;
spectroscopy;
spectrum;
inp based ... See more keywords
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Published in 2017 at "Scientific Reports"
DOI: 10.1038/s41598-017-03409-1
Abstract: Cantilever sensors are among the most important microelectromechanical systems (MEMS), which are usually actuated by electrostatic forces or piezoelectric elements. Although well-developed microfabrication technology has made silicon the prevailing material for MEMS, unique properties of…
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Keywords:
based waveguides;
enhancing optical;
optical forces;
inp based ... See more keywords
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Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/1.5145031
Abstract: Quantum dot and quantum dash (QDash) lasers exhibit lower threshold, less temperature sensitivity, and larger modulation bandwidths than the conventional quantum well lasers. For III–V lasers monol...
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Keywords:
mocvd growth;
inp based;
growth inp;
quantum dash ... See more keywords
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Published in 2023 at "Journal of Applied Physics"
DOI: 10.1063/5.0150647
Abstract: In this paper, an effective equivalent modeling technique has been proposed to describe small-signal characteristics of InP-based high electron mobility transistors (HEMTs) after proton radiation, which is composed of an artificial neural network and equivalent-circuit…
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Keywords:
based hemts;
small signal;
inp based;
model ... See more keywords
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Published in 2020 at "Nanotechnology"
DOI: 10.1088/1361-6528/ab8a8c
Abstract: In this work, we present finite difference time domain (3D-FDTD) simulations and optical characterizations by micro-photoluminescence measurements of InP-based L4/3 photonic crystal cavities with embedded quantum dots (QDs) and designed for the M1 ground mode…
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Keywords:
photonic crystal;
mode properties;
crystal cavities;
inp based ... See more keywords
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Published in 2019 at "Chinese Physics B"
DOI: 10.1088/1674-1056/28/7/078501
Abstract: The performance damage mechanism of InP-based high electron mobility transistors (HEMTs) after proton irradiation has been investigated comprehensively through induced defects. The effects of the defect type, defect energy level with respect to conduction band…
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Keywords:
based high;
high electron;
mobility transistors;
inp based ... See more keywords
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Published in 2021 at "Chinese Physics B"
DOI: 10.1088/1674-1056/abf91a
Abstract: We demonstrate a broad gain, continuous-wave (CW) operation InP-based quantum cascade laser (QCL) emitting at 11.8 μm with a modified dual-upper-state (DAU) and diagonal transition active region design. A 3 mm cavity length, 16.5 μm…
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Keywords:
broad gain;
wave operation;
gain continuous;
inp based ... See more keywords