Articles with "inp based" as a keyword



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Sensitive Immunoassay Based on Biocompatible and Robust Silica-Coated Cd-Free InP-Based Quantum Dots.

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Published in 2021 at "Inorganic chemistry"

DOI: 10.1021/acs.inorgchem.1c00304

Abstract: Low-toxic InP quantum dots (QDs) as an ideal candidate for Cd-based QDs have tremendous potential for next-generation commercial display and biological detection applications. However, the progress in biological detection is still far behind that of… read more here.

Keywords: detection; inp; silica; qds ... See more keywords
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Highly Photoluminescent InP Based Core Alloy Shell QDs from Air-Stable Precursors: Excitation Wavelength Dependent Photoluminescence Quantum Yield, Photoluminescence Decay Dynamics, and Single Particle Blinking Dynamics

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Published in 2018 at "Journal of Physical Chemistry C"

DOI: 10.1021/acs.jpcc.7b11327

Abstract: InP based quantum dots (QDs) are coming in a big way as an alternative to toxic Cd, or Pb based QDs. Unlike many literature reports in this work, green-yellow-orange-red emitting highly photoluminescent (PLQY as high… read more here.

Keywords: highly photoluminescent; core alloy; qds; inp based ... See more keywords
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Enhanced Efficiency of InP-Based Red Quantum Dot Light-Emitting Diodes.

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Published in 2019 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.9b07437

Abstract: Due to the inherent toxicity of cadmium selenide (CdSe)-based quantum dots (QDs), Cd-free alternatives are being widely investigated. Indium phosphide (InP) QDs have shown a great potential as a replacement for CdSe QDs in display… read more here.

Keywords: inp; efficiency inp; inp based; based red ... See more keywords
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InP-Based Quantum Dots Having an InP Core, Composition-Gradient ZnSeS Inner Shell, and ZnS Outer Shell with Sharp, Bright Emissivity, and Blue Absorptivity for Display Devices

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Published in 2020 at "ACS Applied Nano Materials"

DOI: 10.1021/acsanm.0c00008

Abstract: Indium phosphide (InP) has been regarded as the most promising composition of visible quantum dot (QD) emitters for the application to next-generation display devices primarily because of its envir... read more here.

Keywords: display devices; inp based; composition; shell ... See more keywords
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Full-Spectrum InP-Based Quantum Dots with Near-Unity Photoluminescence Quantum Efficiency.

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Published in 2022 at "ACS nano"

DOI: 10.1021/acsnano.2c03138

Abstract: Photoluminescent color conversion by quantum dots (QDs) makes possible the formation of spectrum-on-demand light sources by combining blue LEDs with the light generated by a specific blend of QDs. Such applications, however, require a near-unity… read more here.

Keywords: quantum efficiency; spectroscopy; spectrum; inp based ... See more keywords
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Enhancing Optical Forces in InP-Based Waveguides

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Published in 2017 at "Scientific Reports"

DOI: 10.1038/s41598-017-03409-1

Abstract: Cantilever sensors are among the most important microelectromechanical systems (MEMS), which are usually actuated by electrostatic forces or piezoelectric elements. Although well-developed microfabrication technology has made silicon the prevailing material for MEMS, unique properties of… read more here.

Keywords: based waveguides; enhancing optical; optical forces; inp based ... See more keywords
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MOCVD growth of InP-based 1.3 μm quantum dash lasers on (001) Si

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Published in 2020 at "Applied Physics Letters"

DOI: 10.1063/1.5145031

Abstract: Quantum dot and quantum dash (QDash) lasers exhibit lower threshold, less temperature sensitivity, and larger modulation bandwidths than the conventional quantum well lasers. For III–V lasers monol... read more here.

Keywords: mocvd growth; inp based; growth inp; quantum dash ... See more keywords
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Equivalent small-signal model of InP-based HEMTs with accurate radiation effects characterization

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Published in 2023 at "Journal of Applied Physics"

DOI: 10.1063/5.0150647

Abstract: In this paper, an effective equivalent modeling technique has been proposed to describe small-signal characteristics of InP-based high electron mobility transistors (HEMTs) after proton radiation, which is composed of an artificial neural network and equivalent-circuit… read more here.

Keywords: based hemts; small signal; inp based; model ... See more keywords
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Mode properties of telecom wavelengths InP-based high (Q/V) L4/3 photonic crystal cavities.

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Published in 2020 at "Nanotechnology"

DOI: 10.1088/1361-6528/ab8a8c

Abstract: In this work, we present finite difference time domain (3D-FDTD) simulations and optical characterizations by micro-photoluminescence measurements of InP-based L4/3 photonic crystal cavities with embedded quantum dots (QDs) and designed for the M1 ground mode… read more here.

Keywords: photonic crystal; mode properties; crystal cavities; inp based ... See more keywords
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Effect of defects properties on InP-based high electron mobility transistors

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Published in 2019 at "Chinese Physics B"

DOI: 10.1088/1674-1056/28/7/078501

Abstract: The performance damage mechanism of InP-based high electron mobility transistors (HEMTs) after proton irradiation has been investigated comprehensively through induced defects. The effects of the defect type, defect energy level with respect to conduction band… read more here.

Keywords: based high; high electron; mobility transistors; inp based ... See more keywords
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Broad gain, continuous-wave operation of InP-based quantum cascade laser at λ ∼ 11.8 μm

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Published in 2021 at "Chinese Physics B"

DOI: 10.1088/1674-1056/abf91a

Abstract: We demonstrate a broad gain, continuous-wave (CW) operation InP-based quantum cascade laser (QCL) emitting at 11.8 μm with a modified dual-upper-state (DAU) and diagonal transition active region design. A 3 mm cavity length, 16.5 μm… read more here.

Keywords: broad gain; wave operation; gain continuous; inp based ... See more keywords