Electrical probing of carrier separation in InAs/InP/GaAsSb core-dualshell nanowires
Sign Up to like & getrecommendations! Published in 2020 at "Nano Research"
DOI: 10.1007/s12274-020-2745-5
Abstract: We investigate the tunnel coupling between the outer p-type GaAsSb shell and the n-type InAs core in catalyst-free InAs/InP/GaAsSb core-dualshell nanowires. We present a device fabrication protocol based on wet-etching processes on selected areas of… read more here.
Keywords: gaassb core; inp gaassb; shell; inas inp ... See more keywords
Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With ${f}_{\text{max}}$ ~ 0.53 THz
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2854546
Abstract: We report on the realization mymargin of transferred-substrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4- $\mu \text{m}$ -wide single emitters reached unilateral gain cutoff frequencies of around… read more here.
Keywords: transferred substrate; gain; gaassb; substrate inp ... See more keywords