Squeezed state generation using cryogenic InP HEMT nonlinearity
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/44/5/052901
Abstract: This study focuses on generating and manipulating squeezed states with two external oscillators coupled by an InP HEMT operating at cryogenic temperatures. First, the small-signal nonlinear model of the transistor at high frequency at 5… read more here.
Keywords: nonlinearity; squeezed state; state generation; inp hemt ... See more keywords
Effects of Electrochemical Etching on InP HEMT Fabrication
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Semiconductor Manufacturing"
DOI: 10.1109/tsm.2019.2940320
Abstract: Optimum device performance in terms of noise and gain of AlInAs/GaInAs/InP High Electron Mobility Transistors (HEMTs) requires minimizing the contact resistance ${R} _{C}$ . In several HEMT fabrication steps in device manufacturing it is common… read more here.
Keywords: hemt fabrication; etching inp; inp hemt; effects electrochemical ... See more keywords