InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review
Sign Up to like & getrecommendations! Published in 2018 at "AEU - International Journal of Electronics and Communications"
DOI: 10.1016/j.aeue.2018.07.015
Abstract: Abstract This paper reviews the rapid advancements being made in the development of high electron mobility transistors (HEMTs) on InP substrates for future sub-millimetre wave (30–300 GHz) and terahertz (300 GHz to 3.5 THz) frequency applications. The… read more here.
Keywords: frequency; inp hemts; high electron; mobility transistors ... See more keywords