Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth
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DOI: 10.1364/ome.9.001488
Abstract: We fabricate and study direct InP/Si heterojunction by corrugated epitaxial lateral overgrowth (CELOG). The crystalline quality and depth-dependent charge carrier dynamics of InP/Si heterojunction are assessed by characterizing the cross-section of grown layer by low-temperature… read more here.
Keywords: heterojunction; direct inp; corrugated epitaxial; inp heterojunction ... See more keywords