Sign Up to like & get
recommendations!
0
Published in 2021 at "Optical and Quantum Electronics"
DOI: 10.1007/s11082-021-03077-6
Abstract: The NPN InP/InGaAs heterojunction phototransistor (HPT) is numerically simulated with a two dimensional model based on a finite difference method. The electrical and optical characteristics of HPT are analyzed with different base thickness and compared…
read more here.
Keywords:
base;
inp ingaas;
ingaas heterojunction;
different base ... See more keywords
Sign Up to like & get
recommendations!
0
Published in 2020 at "Optics Communications"
DOI: 10.1016/j.optcom.2019.124561
Abstract: Abstract InP/InGaAs avalanche photodiodes have attracted much attention in optoelectronics and long distance optical communication systems due to their high bit rate and gain-bandwidth. In this paper, to improve the noise characteristics in laser detection…
read more here.
Keywords:
ingaas avalanche;
noise characteristics;
inp ingaas;
Sign Up to like & get
recommendations!
1
Published in 2019 at "Radiation Effects and Defects in Solids"
DOI: 10.1080/10420150.2019.1644639
Abstract: ABSTRACT The effect of traps to C–V and I–V plots of InP/InGaAs heterostructure with 3 MeV proton irradiation at different fluences has been discussed. After proton irradiation, the total reverse capacitance increases, which does not only…
read more here.
Keywords:
proton irradiation;
irradiation different;
inp ingaas;
ingaas heterostructure ... See more keywords
Sign Up to like & get
recommendations!
0
Published in 2019 at "Optics letters"
DOI: 10.1364/ol.44.000767
Abstract: A compact, efficient, and monolithically grown III-V laser source provides an attractive alternative to bonding off-chip lasers for Si photonics research. Although recent demonstrations of microlasers on (001) Si wafers using thick metamorphic buffers are…
read more here.
Keywords:
ingaas;
001 silicon;
silicon insulator;
ingaas nanolaser ... See more keywords