The Method of Low-Temperature ICP Etching of InP/InGaAsP Heterostructures in Cl2-Based Plasma for Integrated Optics Applications
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DOI: 10.3390/mi12121535
Abstract: Chlorine processes are widely used for the formation of waveguide structures in InP-based optoelectronics. Traditionally, ICP etching of InP in a Cl2-based plasma requires substrate temperatures in the range of 150–200 °C. This condition is… read more here.
Keywords: icp etching; optics; inp ingaasp; based plasma ... See more keywords