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Published in 2018 at "Nano letters"
DOI: 10.1021/acs.nanolett.7b03742
Abstract: The possibility to expand the range of material combinations in defect-free heterostructures is one of the main motivations for the great interest in semiconductor nanowires. However, most axial nanowire heterostructures suffer from interface compositional gradients…
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Keywords:
inp nanowire;
atomically sharp;
nanowire;
nanowire heterostructures ... See more keywords
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Published in 2020 at "Nano Letters"
DOI: 10.1021/acs.nanolett.9b04850
Abstract: We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays…
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Keywords:
barrier transparency;
nanowire quantum;
inp nanowire;
orbital tuning ... See more keywords