Articles with "inp quantum" as a keyword



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Spin relaxation of holes in In0.53Ga0.47As/InP quantum wells

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Published in 2021 at "Physica E: Low-dimensional Systems and Nanostructures"

DOI: 10.1016/j.physe.2021.114700

Abstract: Abstract Polarization-resolved photoluminescence was used to study spin relaxation of photoexcited holes in In 0.53Ga0.47As/InP quantum wells in a quantizing magnetic field as a function of temperature. At a temperature below 10 K, the circular polarization… read more here.

Keywords: spin relaxation; relaxation; quantum wells; inp quantum ... See more keywords
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A Water-Free In Situ HF Treatment for Ultrabright InP Quantum Dots

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Published in 2022 at "Chemistry of Materials"

DOI: 10.1021/acs.chemmater.2c02800

Abstract: Indium phosphide quantum dots are the main alternative for toxic and restricted Cd-based quantum dots for lighting and display applications, but in the absence of protecting ZnSe and/or ZnS shells, InP quantum dots suffer from… read more here.

Keywords: quantum dots; quantum; inp quantum; water free ... See more keywords
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Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes.

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Published in 2019 at "Nano letters"

DOI: 10.1021/acs.nanolett.9b00959

Abstract: We report multiwavelength single InGaAs/InP quantum well nanowire light-emitting diodes grown by metal organic chemical vapor deposition using selective area epitaxy technique and reveal the complex origins of their electroluminescence properties. We observe that the… read more here.

Keywords: inp quantum; ingaas inp; nanowire; quantum well ... See more keywords
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Suppressing the Cation Exchange at the Core/Shell Interface of InP Quantum Dots by a Selenium Shielding Layer Enables Efficient Green Light-Emitting Diodes.

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Published in 2022 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.2c01699

Abstract: Indium phosphide (InP) quantum dots (QDs) have demonstrated great potential for light-emitting diode (LED) application because of their excellent optical properties and nontoxicity. However, the over performance of InP QDs still lags behind that of… read more here.

Keywords: inp; light emitting; inp quantum; shell ... See more keywords
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Direct Imaging of the Carrier Capture into Individual InP Quantum Dots of a Semiconductor Disk Laser Membrane.

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Published in 2022 at "ACS nano"

DOI: 10.1021/acsnano.1c11260

Abstract: We report on nanoscopic exploration of the luminescence from individual InP quantum dots (QDs) by means of highly spatially resolved cathodoluminescence (CL) spectroscopy directly performed in a scanning transmission electron microscope (STEM). A 7-fold layer… read more here.

Keywords: individual inp; quantum dots; inp quantum; spectroscopy ... See more keywords
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Optical properties and structure of Ag-doped InP quantum dots prepared by a phosphine synthetic route.

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Published in 2018 at "Dalton transactions"

DOI: 10.1039/c8dt02434k

Abstract: We report a novel technique for doping InP quantum dots (QDs) with silver that makes use of a AgCl·TOP complex as a source of silver and PH3 as a phosphorus precursor. Formation of two types… read more here.

Keywords: properties structure; inp quantum; optical properties; structure doped ... See more keywords
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Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring.

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Published in 2021 at "Nanoscale"

DOI: 10.1039/d1nr04263g

Abstract: Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs) with an elongated top-view cross-section relying… read more here.

Keywords: inas inp; quantum dot; geometry; inp ... See more keywords
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Static and dynamic characteristics of an InAs/InP quantum-dot optical amplifier operating at high temperatures.

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Published in 2017 at "Optics express"

DOI: 10.1364/oe.25.027262

Abstract: We report on high quality InAs/InP quantum dot optical amplifiers for the 1550 nm wavelength range operating over a wide temperature range of 25 to 100 °C. A temperature dependent shift of the peak gain… read more here.

Keywords: inp quantum; range; quantum dot; dot optical ... See more keywords
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Monolithic InAs/InP quantum dash dual-wavelength DFB laser with ultra-low noise common cavity modes for millimeter-wave applications.

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Published in 2019 at "Optics express"

DOI: 10.1364/oe.27.035368

Abstract: We have developed and experimentally demonstrated a novel monolithic InAs/InP quantum-dash dual-wavelength distributed feedback (QD DW-DFB) C-band laser as a compact optical beat source to generate millimeter-wave (MMW) signals. The device uses a common gain… read more here.

Keywords: monolithic inas; inp quantum; dash dual; quantum dash ... See more keywords
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Phenethylamine ligand engineering of red InP quantum dots for improving the efficiency of quantum dot light-emitting diodes.

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Published in 2020 at "Optics letters"

DOI: 10.1364/ol.405520

Abstract: In this Letter, red-emitting multi-shelled indium phosphide (InP) quantum dots (QDs) were synthesized using the safe phosphorus precursor tris(dimethylamino)phosphine ((DMA)3P). The long-chain ligands of oleylamine (OAm) in the (DMA)3P phosphide source-based InP QDs were partially… read more here.

Keywords: efficiency; inp qds; engineering; inp quantum ... See more keywords
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Synthesis and systematic optical investigation of selective area droplet epitaxy of InAs/InP quantum dots assisted by block copolymer lithography

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Published in 2019 at "Optical Materials Express"

DOI: 10.1364/ome.9.001738

Abstract: We report on the systematic investigation of the optical properties of a selectively grown quantum dot gain material assisted by block-copolymer lithography for potential applications in active optical devices operating in the wavelength range around… read more here.

Keywords: quantum dots; inas inp; investigation; block ... See more keywords