Micrometer-scale InP selectively grown on SOI for fully integrated Si-photonics
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DOI: 10.1063/5.0015130
Abstract: Practical applications of low-defect III–V materials grown on Si require large areas for patterning metal contacts and enhancing design flexibility. Here, we report selective area growth of bufferless and micrometer-scale InP on commercial (001)-oriented silicon-on-insulators.… read more here.
Keywords: micrometer scale; scale inp; inp selectively; selectively grown ... See more keywords