Influences of electrode material and design on the reliability of IRFPAs detector under thermal shock
Sign Up to like & getrecommendations! Published in 2017 at "Optical and Quantum Electronics"
DOI: 10.1007/s11082-017-0908-8
Abstract: Under thermal shock, high fracture probability in indium antimonide (InSb) infrared focal plane arrays (IRFPAs) limits its applicability. Typical fracture photographs under thermal shock shows that the cracks originating from the area above public electrode… read more here.
Keywords: thermal shock; insb; electrode material; electrode ... See more keywords
Study on thermal effects of InSb infrared focal plane arrays irradiated by pulsed laser
Sign Up to like & getrecommendations! Published in 2018 at "Optical and Quantum Electronics"
DOI: 10.1007/s11082-018-1491-3
Abstract: To learn thermal effects of InSb infrared focal plane arrays (IRFPAs) detector irradiated by pulsed laser, basing on ANSYS software, and considering temperature dependent thermal parameters of InSb, a three dimensional temperature field analysis model… read more here.
Keywords: insb; irfpas detector; temperature; insb irfpas ... See more keywords
Assessment of InSb infrared detector arrays assembly procedure employing ANSYS
Sign Up to like & getrecommendations! Published in 2019 at "Optical and Quantum Electronics"
DOI: 10.1007/s11082-019-1805-0
Abstract: Local failure in the InSb infrared detector arrays (InSb IDAs) is chiefly triggered by the local shear stress, the peeling stress, and the tensile stress in the InSb IDAs. Thus, these three stress components are… read more here.
Keywords: insb; assembly procedure; insb idas; stress ... See more keywords
Thermal stress analysis of InSb IRPFAs assembled in Dewar
Sign Up to like & getrecommendations! Published in 2020 at "Optical and Quantum Electronics"
DOI: 10.1007/s11082-020-02386-6
Abstract: Thermal stress accumulated in InSb infrared focal plane arrays (IRFPAs) during liquid nitrogen shock tests usually gives rise to brittle fracture of InSb chips, local delamination between InSb chips and underfill. Upon the specific structure… read more here.
Keywords: thermal stress; fixed mode; insb; surface ... See more keywords
Josephson Diode Effect in High-Mobility InSb Nanoflags
Sign Up to like & getrecommendations! Published in 2022 at "Nano Letters"
DOI: 10.1021/acs.nanolett.2c02899
Abstract: We report nonreciprocal dissipation-less transport in single ballistic InSb nanoflag Josephson junctions. Applying an in-plane magnetic field, we observe an inequality in supercurrent for the two opposite current propagation directions. Thus, these devices can work… read more here.
Keywords: diode effect; effect; insb nanoflags; insb ... See more keywords
Anomalous magnetic and transport properties of InSb(Mn) crystals near metal-insulator transition
Sign Up to like & getrecommendations! Published in 2018 at "AIP Advances"
DOI: 10.1063/1.5026315
Abstract: In Mn-doped InSb single crystals an unusual, for nonmagnetic semiconductors, dependence on manganese concentration have been revealed for magnetization, conductivity, magnetoresistance and the Hall effect in the range NMn= (1÷2)×1017cm-3. Noticeable low temperature magnetization increase… read more here.
Keywords: properties insb; insulator transition; insb; insb crystals ... See more keywords
Gate-controlled supercurrent in ballistic InSb nanoflag Josephson junctions
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0071218
Abstract: High-quality III-V narrow band gap semiconductor materials with strong spin-orbit coupling and large Landé g-factor provide a promising platform for next-generation applications in the field of high-speed electronics, spintronics, and quantum computing. Indium Antimonide (InSb)… read more here.
Keywords: controlled supercurrent; gate controlled; insb; josephson ... See more keywords
Ballistic transport and quantum interference in InSb nanowire devices
Sign Up to like & getrecommendations! Published in 2017 at "Chinese Physics B"
DOI: 10.1088/1674-1056/26/2/027305
Abstract: An experimental realization of a ballistic superconductor proximitized semiconductor nanowire device is a necessary step towards engineering topological quantum electronics. Here, we report on ballistic transport in InSb nanowires grown by molecular-beam epitaxy contacted by… read more here.
Keywords: quantum; ballistic transport; quantum interference; insb ... See more keywords
Band alignment at the CdTe/InSb (001) heterointerface
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Vacuum Science and Technology"
DOI: 10.1116/1.5022799
Abstract: CdTe/InSb heterojunctions have attracted considerable attention because of its almost perfect lattice match and the presence of nonoctal interface bonding. This heterojunction is a model heterovalent system to describe band offsets. In this research, molecular… read more here.
Keywords: insb; band; insb 001; spectroscopy ... See more keywords
Generation of bright-dark solitons in an Er-doped fiber laser employing InSb as a saturable absorber.
Sign Up to like & getrecommendations! Published in 2023 at "Applied optics"
DOI: 10.1364/ao.478859
Abstract: In this paper, an indium antimonide (InSb) saturable absorber (SA) was successfully fabricated. The saturable absorption properties of the InSb SA were studied, and they show a modulation depth and a saturable intensity of 5.17%… read more here.
Keywords: employing insb; laser; insb; saturable absorber ... See more keywords
Faraday effect in polycrystalline Mn doped InSb for LWIR applications
Sign Up to like & getrecommendations! Published in 2021 at "Optical Materials Express"
DOI: 10.1364/ome.427195
Abstract: The Faraday rotation (FR) in Mn-doped InSb (Mn-InSb) depends on extremely low doping of Mn into the InSb lattice. The polycrystalline Mn-InSb was prepared by direct alloying of InSb and Mn2Sb, followed by slow cooling… read more here.
Keywords: insb; effect polycrystalline; doped insb; polycrystalline doped ... See more keywords