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Published in 2017 at "Chinese Physics Letters"
DOI: 10.1088/0256-307x/34/7/076105
Abstract: We report the growth of InSb layers directly on GaAs (001) substrates without any buffer layers by molecular beam epitaxy (MBE). Influences of growth temperature and V/III flux ratios on the crystal quality, the surface…
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Keywords:
thin films;
buffer layers;
insb thin;
without buffer ... See more keywords