Articles with "inse" as a keyword



Expanded InSe Crystal Structure with Reduced Intrinsic Defects for High-Performance Field-Effect Transistors.

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Published in 2025 at "Advanced materials"

DOI: 10.1002/adma.202506506

Abstract: Intrinsic defect plays a crucial role in the electrical and photoelectrical performance of InSe‐based FETs. Here, a space‐growth InSe on China Space Station with reduced intrinsic defects is reported and high‐performance InSe field‐effect transistors are… read more here.

Keywords: space; inse; high performance; performance ... See more keywords
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Enhanced Optical Emission from 2D InSe Bent onto Si‐Pillars

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Published in 2020 at "Advanced Optical Materials"

DOI: 10.1002/adom.202000828

Abstract: Controlling the propagation and intensity of an optical signal is central to several technologies ranging from quantum communication to signal processing. These require a versatile class of functional materials with tailored electronic and optical properties,… read more here.

Keywords: inse; bent onto; inse bent; optical emission ... See more keywords

Robust Self‐powered Optoelectronic Synapses Based on Epitaxial InSe/GaN Heterojunction with Interfacial Charge‐Trapping Layer

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Published in 2024 at "Advanced Optical Materials"

DOI: 10.1002/adom.202400358

Abstract: Neuromorphic devices that parallelize perception, preprocessing, and computation functions are expected to play a significant role in future non‐von Neumann architecture computers. Herein, a new retina‐inspired broadband self‐powered optoelectronic synaptic device based on 2D/3D heterojunction… read more here.

Keywords: layer; inse gan; epitaxial inse; inse ... See more keywords

Defect Engineering via Vacuum Annealing: Precise Selenium Vacancy Control for High‐Performance InSe Photodetectors

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Published in 2025 at "Advanced Electronic Materials"

DOI: 10.1002/aelm.202500436

Abstract: Few‐layer indium selenide (InSe) holds promise for next‐generation optoelectronics but suffers from defect‐related limitations. While thermal annealing is a common post‐synthesis technique for tuning the properties of 2D materials, its application in InSe is hindered… read more here.

Keywords: defect engineering; vacuum; vacuum annealing; inse ... See more keywords

Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors.

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Published in 2019 at "Small"

DOI: 10.1002/smll.201905902

Abstract: Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their unique geometries and physical properties. However, it is challenging to synthesize semiconducting nanowires directly on a SiO2 /Si substrate due to… read more here.

Keywords: inse nanowires; inse; sio2 substrates; edge epitaxial ... See more keywords

The role of the intrinsic Se and In vacancies in the interaction of O2 and H2O molecules with the InSe monolayer

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Published in 2018 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2017.10.204

Abstract: Abstract Based on first-principle calculations, the effects of the intrinsic point defects, including single Se vacancy and single In vacancy, on the interaction of O 2 and H 2 O molecules with the InSe monolayer… read more here.

Keywords: inse; molecules inse; dissociation; vacancy ... See more keywords

Tunable electronic properties of multilayer InSe by alloy engineering for high performance self-powered photodetector.

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Published in 2020 at "Journal of colloid and interface science"

DOI: 10.1016/j.jcis.2020.01.025

Abstract: Multilayer indium selenide (InSe) is a good candidate for high performance electronic and optoelectronic devices. The electrical performance of InSe is effectively regulated by dielectric layers, contact electrodes and surface doping. However, as a powerful… read more here.

Keywords: inse; alloy engineering; self; self powered ... See more keywords
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Scaling law of hydrogen evolution reaction for InSe monolayer with 3d transition metals doping and strain engineering

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Published in 2019 at "Journal of Energy Chemistry"

DOI: 10.1016/j.jechem.2019.05.007

Abstract: Abstract Recently, two dimensional InSe attracts great attentions as potential hydrogen production photocatalysts. Here, comprehensive investigations on the hydrogen evolution reaction activity of InSe monolayer with 3d transition metal doping and biaxial strain were performed based… read more here.

Keywords: inse; hydrogen; hydrogen evolution; inse monolayer ... See more keywords

Peculiarities of using s-simulation for parametric identification of multiplet 115In NQR spectra in InSe

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Published in 2017 at "Measurement"

DOI: 10.1016/j.measurement.2017.04.035

Abstract: Abstract On the basis of a single-coil coherent Fourier radio spectrometer without carrier frequency conversion a simulation model of pulsed method for nuclear quadrupole resonance observation is proposed. In case of resonance conditions excitation by… read more here.

Keywords: nqr spectra; inse; peculiarities using; using simulation ... See more keywords
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Dielectric dispersion in InSe/CdS bilayers

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Published in 2018 at "Physica E: Low-dimensional Systems and Nanostructures"

DOI: 10.1016/j.physe.2018.05.038

Abstract: Abstract In the current study, the effect of the amorphous InSe thin film substrate on the structural, optical and dielectric properties of CdS are investigated. The structural analysis of the bilayers indicated a strained growth… read more here.

Keywords: inse; inse cds; dielectric dispersion; dispersion inse ... See more keywords

Origin of Oxidation Variations in Ambient-Stable β-InSe.

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Published in 2024 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.4c15577

Abstract: Understanding and controlling the oxidation of layered materials remain critical issues in the final stages of their practical application in devices. Layered materials achieve a band gap by removing inversion symmetry. However, the oxidation process… read more here.

Keywords: origin oxidation; ambient stable; oxidation variations; variations ambient ... See more keywords