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Published in 2025 at "Advanced materials"
DOI: 10.1002/adma.202506506
Abstract: Intrinsic defect plays a crucial role in the electrical and photoelectrical performance of InSe‐based FETs. Here, a space‐growth InSe on China Space Station with reduced intrinsic defects is reported and high‐performance InSe field‐effect transistors are…
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Keywords:
space;
inse;
high performance;
performance ... See more keywords
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Published in 2020 at "Advanced Optical Materials"
DOI: 10.1002/adom.202000828
Abstract: Controlling the propagation and intensity of an optical signal is central to several technologies ranging from quantum communication to signal processing. These require a versatile class of functional materials with tailored electronic and optical properties,…
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Keywords:
inse;
bent onto;
inse bent;
optical emission ... See more keywords
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Published in 2024 at "Advanced Optical Materials"
DOI: 10.1002/adom.202400358
Abstract: Neuromorphic devices that parallelize perception, preprocessing, and computation functions are expected to play a significant role in future non‐von Neumann architecture computers. Herein, a new retina‐inspired broadband self‐powered optoelectronic synaptic device based on 2D/3D heterojunction…
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Keywords:
layer;
inse gan;
epitaxial inse;
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Published in 2025 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202500436
Abstract: Few‐layer indium selenide (InSe) holds promise for next‐generation optoelectronics but suffers from defect‐related limitations. While thermal annealing is a common post‐synthesis technique for tuning the properties of 2D materials, its application in InSe is hindered…
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Keywords:
defect engineering;
vacuum;
vacuum annealing;
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Published in 2019 at "Small"
DOI: 10.1002/smll.201905902
Abstract: Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their unique geometries and physical properties. However, it is challenging to synthesize semiconducting nanowires directly on a SiO2 /Si substrate due to…
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Keywords:
inse nanowires;
inse;
sio2 substrates;
edge epitaxial ... See more keywords
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Published in 2018 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2017.10.204
Abstract: Abstract Based on first-principle calculations, the effects of the intrinsic point defects, including single Se vacancy and single In vacancy, on the interaction of O 2 and H 2 O molecules with the InSe monolayer…
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Keywords:
inse;
molecules inse;
dissociation;
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Published in 2020 at "Journal of colloid and interface science"
DOI: 10.1016/j.jcis.2020.01.025
Abstract: Multilayer indium selenide (InSe) is a good candidate for high performance electronic and optoelectronic devices. The electrical performance of InSe is effectively regulated by dielectric layers, contact electrodes and surface doping. However, as a powerful…
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Keywords:
inse;
alloy engineering;
self;
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Published in 2019 at "Journal of Energy Chemistry"
DOI: 10.1016/j.jechem.2019.05.007
Abstract: Abstract Recently, two dimensional InSe attracts great attentions as potential hydrogen production photocatalysts. Here, comprehensive investigations on the hydrogen evolution reaction activity of InSe monolayer with 3d transition metal doping and biaxial strain were performed based…
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Keywords:
inse;
hydrogen;
hydrogen evolution;
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Published in 2017 at "Measurement"
DOI: 10.1016/j.measurement.2017.04.035
Abstract: Abstract On the basis of a single-coil coherent Fourier radio spectrometer without carrier frequency conversion a simulation model of pulsed method for nuclear quadrupole resonance observation is proposed. In case of resonance conditions excitation by…
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Keywords:
nqr spectra;
inse;
peculiarities using;
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Published in 2018 at "Physica E: Low-dimensional Systems and Nanostructures"
DOI: 10.1016/j.physe.2018.05.038
Abstract: Abstract In the current study, the effect of the amorphous InSe thin film substrate on the structural, optical and dielectric properties of CdS are investigated. The structural analysis of the bilayers indicated a strained growth…
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Keywords:
inse;
inse cds;
dielectric dispersion;
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Published in 2024 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.4c15577
Abstract: Understanding and controlling the oxidation of layered materials remain critical issues in the final stages of their practical application in devices. Layered materials achieve a band gap by removing inversion symmetry. However, the oxidation process…
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Keywords:
origin oxidation;
ambient stable;
oxidation variations;
variations ambient ... See more keywords