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   Articles with "inse" as a keyword



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Enhanced Optical Emission from 2D InSe Bent onto Si‐Pillars

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recommendations! Published in 2020 at "Advanced Optical Materials"

DOI: 10.1002/adom.202000828

Abstract: Controlling the propagation and intensity of an optical signal is central to several technologies ranging from quantum communication to signal processing. These require a versatile class of functional materials with tailored electronic and optical properties,… read more here.

Keywords: inse; bent onto; inse bent; optical emission ... See more keywords
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Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors.

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recommendations! Published in 2019 at "Small"

DOI: 10.1002/smll.201905902

Abstract: Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their unique geometries and physical properties. However, it is challenging to synthesize semiconducting nanowires directly on a SiO2 /Si substrate due to… read more here.

Keywords: inse nanowires; inse; sio2 substrates; edge epitaxial ... See more keywords
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The role of the intrinsic Se and In vacancies in the interaction of O2 and H2O molecules with the InSe monolayer

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recommendations! Published in 2018 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2017.10.204

Abstract: Abstract Based on first-principle calculations, the effects of the intrinsic point defects, including single Se vacancy and single In vacancy, on the interaction of O 2 and H 2 O molecules with the InSe monolayer… read more here.

Keywords: inse; molecules inse; dissociation; vacancy ... See more keywords
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Tunable electronic properties of multilayer InSe by alloy engineering for high performance self-powered photodetector.

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recommendations! Published in 2020 at "Journal of colloid and interface science"

DOI: 10.1016/j.jcis.2020.01.025

Abstract: Multilayer indium selenide (InSe) is a good candidate for high performance electronic and optoelectronic devices. The electrical performance of InSe is effectively regulated by dielectric layers, contact electrodes and surface doping. However, as a powerful… read more here.

Keywords: inse; alloy engineering; self; self powered ... See more keywords
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Scaling law of hydrogen evolution reaction for InSe monolayer with 3d transition metals doping and strain engineering

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recommendations! Published in 2019 at "Journal of Energy Chemistry"

DOI: 10.1016/j.jechem.2019.05.007

Abstract: Abstract Recently, two dimensional InSe attracts great attentions as potential hydrogen production photocatalysts. Here, comprehensive investigations on the hydrogen evolution reaction activity of InSe monolayer with 3d transition metal doping and biaxial strain were performed based… read more here.

Keywords: inse; hydrogen; hydrogen evolution; inse monolayer ... See more keywords
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Peculiarities of using s-simulation for parametric identification of multiplet 115In NQR spectra in InSe

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recommendations! Published in 2017 at "Measurement"

DOI: 10.1016/j.measurement.2017.04.035

Abstract: Abstract On the basis of a single-coil coherent Fourier radio spectrometer without carrier frequency conversion a simulation model of pulsed method for nuclear quadrupole resonance observation is proposed. In case of resonance conditions excitation by… read more here.

Keywords: nqr spectra; inse; peculiarities using; using simulation ... See more keywords
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Dielectric dispersion in InSe/CdS bilayers

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recommendations! Published in 2018 at "Physica E: Low-dimensional Systems and Nanostructures"

DOI: 10.1016/j.physe.2018.05.038

Abstract: Abstract In the current study, the effect of the amorphous InSe thin film substrate on the structural, optical and dielectric properties of CdS are investigated. The structural analysis of the bilayers indicated a strained growth… read more here.

Keywords: inse; inse cds; dielectric dispersion; dispersion inse ... See more keywords
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Synthesis of Superlattice InSe Nanosheets with Enhanced Electronic and Optoelectronic Performance.

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recommendations! Published in 2019 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.9b01747

Abstract: Multilayer InSe has emerged as a promising candidate for applications in novel electronic and optoelectronic devices due to its direct bandgap, high electron mobility, and excellent photoresponse with a broad response range. Here, we report… read more here.

Keywords: electronic optoelectronic; inse; superlattice inse; synthesis superlattice ... See more keywords
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Boosting Photoresponse of Self-Powered InSe-Based Photoelectrochemical Photodetectors via Suppression of Interface Doping.

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recommendations! Published in 2022 at "ACS nano"

DOI: 10.1021/acsnano.2c02986

Abstract: Two-dimensional (2D) InSe is a good candidate for high-performance photodetectors due to its good light absorption and electrical transport properties. However, 2D InSe photodetectors usually endure a large driving voltage, and 2D InSe-based heterojunction photodetectors… read more here.

Keywords: inse based; inse; powered inse; photoresponse ... See more keywords
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Carrier Recirculation Induced High-Gain Photodetector Based on van der Waals Heterojunction.

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recommendations! Published in 2022 at "ACS nano"

DOI: 10.1021/acsnano.2c09366

Abstract: Two-dimensional (2D) materials have attracted great attention in the field of photodetection due to their excellent electronic and optoelectronic properties. However, the weak optical absorption caused by atomically thin layers and the short lifetime of… read more here.

Keywords: high gain; heterojunction; inse; gain ... See more keywords
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Indirect to Direct Gap Crossover in Two-Dimensional InSe Revealed by Angle-Resolved Photoemission Spectroscopy.

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recommendations! Published in 2019 at "ACS nano"

DOI: 10.1021/acsnano.8b08726

Abstract: Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductors that feature a strong variation of their band gap as a function of the number of layers… read more here.

Keywords: gap; inse; direct gap; two dimensional ... See more keywords