Channel-Type Engineering in an InSe-Based Transistor: Paving a Way for Next-Generation Reconfigurable Electronics.
Sign Up to like & getrecommendations! Published in 2025 at "Nano letters"
DOI: 10.1021/acs.nanolett.5c03444
Abstract: Achieving reversible n/p-type switching in two-dimensional semiconductors is crucial for reconfigurable nanoelectronic devices. Here, we demonstrate a fully reversible channel-type conversion in InSe-based transistors via ultraviolet-ozone oxidation and thermal annealing, enabling stable bidirectional polarity switching.… read more here.
Keywords: type engineering; reconfigurable electronics; type; inse based ... See more keywords
Boosting Photoresponse of Self-Powered InSe-Based Photoelectrochemical Photodetectors via Suppression of Interface Doping.
Sign Up to like & getrecommendations! Published in 2022 at "ACS nano"
DOI: 10.1021/acsnano.2c02986
Abstract: Two-dimensional (2D) InSe is a good candidate for high-performance photodetectors due to its good light absorption and electrical transport properties. However, 2D InSe photodetectors usually endure a large driving voltage, and 2D InSe-based heterojunction photodetectors… read more here.
Keywords: inse based; inse; powered inse; photoresponse ... See more keywords