Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors.
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DOI: 10.1002/smll.201905902
Abstract: Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their unique geometries and physical properties. However, it is challenging to synthesize semiconducting nanowires directly on a SiO2 /Si substrate due to… read more here.
Keywords: inse nanowires; inse; sio2 substrates; edge epitaxial ... See more keywords