A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields
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DOI: 10.1038/s41565-018-0339-0
Abstract: Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields1–3. Different device concepts have been predicted4,5 and experimentally demonstrated, such as low-temperature AFM tunnel junctions that… read more here.
Keywords: magnetic fields; piezoelectric strain; temperature; insensitive magnetic ... See more keywords