Ion Drift and Polarization in Thin SiO2 and HfO2 Layers Inserted in Silicon on Sapphire
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DOI: 10.3390/nano12193394
Abstract: To reduce the built-in positive charge value at the silicon-on-sapphire (SOS) phase border obtained by bonding and a hydrogen transfer, thermal silicon oxide (SiO2) layers with a thickness of 50–310 nm and HfO2 layers with… read more here.
Keywords: hfo2 layers; ion drift; sapphire; inserted silicon ... See more keywords