Improvements on the Interfacial Properties of High-k/Ge MIS Structures by Inserting a La2O3 Passivation Layer
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DOI: 10.3390/ma11112333
Abstract: In this paper, the impact of La2O3 passivation layers on the interfacial properties of Ge-based metal-insulator-semiconductor (MIS) structures was investigated. It was proven that the formation of a thermodynamically stable LaGeOx component by incorporating a… read more here.
Keywords: inserting la2o3; interfacial properties; passivation; layer ... See more keywords