Charge Transport inside TiO2 Memristors Prepared via FEBID
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DOI: 10.3390/nano12234145
Abstract: We fabricated memristive devices using focused electron beam-induced deposition (FEBID) as a direct-writing technique employing a Pt/TiO2/Pt sandwich layer device configuration. Pinching in the measured current-voltage characteristics (i-v), the characteristic fingerprint of memristive behavior was… read more here.
Keywords: inside tio2; febid; charge transport; transport inside ... See more keywords