HRS Instability in Oxide-Based Bipolar Resistive Switching Cells
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3018096
Abstract: One of the key challenges in the reliability of valence change [valence change-based memory (VCM)] resistive switching random access memories (ReRAMs) is the short-term instability of the programed state. Due to read noise, program verify… read more here.
Keywords: instability; read noise; hrs instability; instability oxide ... See more keywords