Investigation of Dual-Ion Beam Sputter-Instigated Plasmon Generation in TCOs: A Case Study of GZO.
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DOI: 10.1021/acsami.7b15103
Abstract: The use of the high free-electron concentration in heavily doped semiconductor enables the realization of plasmons. We report a novel approach to generate plasmons in Ga:ZnO (GZO) thin films in the wide spectral range of… read more here.
Keywords: gzo; ion beam; dual ion; instigated plasmon ... See more keywords