An insulated gate bipolar transistor with three-layer poly gate for improved figure of merit
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-020-04113-z
Abstract: In this study, an insulated gate bipolar transistor (IGBT) with three-layer poly gate is proposed and investigated by TCAD simulation. Here, gate is spilt in two different workfunction materials of N+ poly (ϕg\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym}… read more here.
Keywords: usepackage; layer; insulated gate; gate bipolar ... See more keywords
An electro-thermal parametric degradation model of insulated gate bipolar transistor modules
Sign Up to like & getrecommendations! Published in 2020 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.113559
Abstract: Abstract Insulated gate bipolar transistor (IGBT) is widely used in a variety of applications, many of them are safety-critical. The failure of the IGBT accounts for a significant portion of the failures in the converter.… read more here.
Keywords: degradation; temperature; insulated gate; model ... See more keywords
A low-loss variable-doped trench-insulated gate bipolar transistor with reduced on-state voltage
Sign Up to like & getrecommendations! Published in 2021 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/abf909
Abstract: The performance of a superjunction trench-insulated gate bipolar transistor with variable vertical doping in the epitaxial region along with variation in the collector layer is investigated. The concept of vertical variation transfers the avalanche multiplication… read more here.
Keywords: voltage; bipolar transistor; insulated gate; trench insulated ... See more keywords
Online Degradation State Assessment Methodology for Multi-Mode Failures of Insulated Gate Bipolar Transistor
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Access"
DOI: 10.1109/access.2020.2984385
Abstract: Insulated-gate bipolar transistors (IGBTs) are one of the most vulnerable components that account for a significant fraction of inverter and converter failures. This paper conducts a degradation analysis of IGBTs using run-to-failure measurements. Online assessment… read more here.
Keywords: methodology; insulated gate; degradation state; gate bipolar ... See more keywords
Numerical Study of a Thyristor Injection Insulated Gate Bipolar Transistor (TI-IGBT) Using P-N-P Collector
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2019.2941545
Abstract: A new thyristor injection concept is proposed to decrease conductivity modulation effects in an Insulated Gate Bipolar Transistor (TI-IGBT), which adds a floating p-type layer and an n-type layer at the collector side. The additional… read more here.
Keywords: thyristor injection; injection; insulated gate; collector ... See more keywords
High Voltage Insulated Gate Trigger Thyristor With High-Efficiency Injection for Fast Turn-on and High Current Pulse
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2019.2945335
Abstract: In this letter, a 4.5kV high-di/dt insulated gate trigger thyristor (IGTT) with high-efficiency injection is proposed, in which, bottom-punched N-well combined with thick high-doping P+-anode is implemented to enhance the excess carrier injection of both… read more here.
Keywords: trigger thyristor; high efficiency; injection; insulated gate ... See more keywords
Lifetime Estimation of Insulated Gate Bipolar Transistor Modules Using Two-Step Bayesian Estimation
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2017.2694158
Abstract: The reliability of the package of insulated gate bipolar transistor (IGBT) modules has been of great concern. Some fatigue-related failure mechanisms are commonly observed under power cycling conditions. An approach of a multi-step Bayesian estimation… read more here.
Keywords: lifetime estimation; estimation; bipolar transistor; insulated gate ... See more keywords
A Network Topological Approach-Based Transient 3-D Electrothermal Model of Insulated-Gate Bipolar Transistor
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Magnetics"
DOI: 10.1109/tmag.2019.2946283
Abstract: With the continuous miniaturization and rapid increase in the power ratings of an insulated-gate bipolar transistor (IGBT), the exact junction temperature becomes one of the critical performance parameters in evaluating the reliability of the transistor.… read more here.
Keywords: insulated gate; model; bipolar transistor; gate bipolar ... See more keywords
Insulated-gate bipolar transistor junction temperature estimation based on ℋ ∞ robust controller in wind energy applications
Sign Up to like & getrecommendations! Published in 2019 at "Wind Engineering"
DOI: 10.1177/0309524x19877645
Abstract: This article presents lifetime estimation using robust control based on thermal path degradation condition of insulated-gate bipolar transistor wind power modules. Online measurements of the on-state voltage V C E ON are considered to be… read more here.
Keywords: gate bipolar; junction temperature; insulated gate; wind ... See more keywords
Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15030791
Abstract: Insulated-gate GaN-based transistors can fulfill the emerging demands for the future generation of highly efficient electronics for high-frequency, high-power and high-temperature applications. However, in contrast to Si-based devices, the introduction of an insulator on (Al)GaN… read more here.
Keywords: gan based; based devices; gate dielectric; insulated gate ... See more keywords