A reconfigurable silicon-on-insulator diode with tunable electrostatic doping
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DOI: 10.1063/1.4999314
Abstract: P-N diodes can be emulated in ultrathin, fully depleted Silicon-On-Insulator films by appropriately biasing the front and back gates. Adjacent electron and hole populations form a virtual P-N junction. Systematic current-voltage I-V characteristics are presented… read more here.
Keywords: electrostatic doping; reconfigurable silicon; diode; silicon insulator ... See more keywords