Insulator-quantum Hall transition in n-InGaAs/GaAs heterostructures
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DOI: 10.1063/1.4983333
Abstract: The longitudinal ρxx(B,T) and Hall ρxy(B,T) resistances in magnetic fields B up to 12 T at temperatures T = 1.8–80 K are studied experimentally in n-In0.2Ga0.8As/GaAs nanostructures with single and double strongly-coupled quantum wells separated by… read more here.
Keywords: hall; quantum hall; gaas; insulator quantum ... See more keywords