Analytical modeling of the lattice and thermo-elastic coefficient mismatch-induced stress into silicon nanowires horizontally embedded on insulator-on-silicon substrates
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2016.12.001
Abstract: Abstract In the current work, an analytical model has been developed to estimate the amount of induced stress in nanowires which are horizontally embedded with different fractions within an Insulator-on-Silicon substrate. For estimating such stress,… read more here.
Keywords: induced stress; horizontally embedded; thermo elastic; nanowires horizontally ... See more keywords
Surface edge states and enhanced emission on topological insulator of silicon oxide
Sign Up to like & getrecommendations! Published in 2019 at "Surface Science"
DOI: 10.1016/j.susc.2018.12.003
Abstract: Abstract The stable form of silicon takes on the structure of diamond (cF8, d -Si) which is an indirect bandgap semiconductor. Its emission efficiency is very lower (about 10−5) that prevents it from being considered… read more here.
Keywords: topological insulator; emission; silicon; insulator silicon ... See more keywords
Photo-detecting of graphene/insulator/silicon heterojunction with direct tunneling mechanism
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Applied Physics"
DOI: 10.1063/1.5125284
Abstract: Due to its atomically ultrathin morphology and superior optoelectronic properties, graphene has been broadly studied and utilized in phototransistors, photoconductors, or heterojunction nanostructures. However, in practical devices, the disadvantages of graphene should be concerned for… read more here.
Keywords: graphene insulator; insulator; heterojunction; insulator silicon ... See more keywords
Fraction of Insertion of the Channel Fin as Performance Booster in Strain-Engineered p-FinFET Devices With Insulator-on-Silicon Substrate
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2781264
Abstract: The combined impact of process- and substrate-induced stress has been analytically modeled for a rectangular fin inserted into an insulator-on-silicon (IOS) substrate. Stress estimation and profiling are performed for different fractional insertion of the fin… read more here.
Keywords: insertion; fin; stress; strain engineered ... See more keywords