Highly integrated GeTe thin-film thermoelectric devices for extreme environments
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DOI: 10.1039/d5ta05595d
Abstract: By incorporating a spectrally selective absorber with self-cleaning properties into TE thin-film devices, the device demonstrates a high open-circuit voltage density of ∼10.4 mV cm−2 and an output power density of ∼2.5 mW cm−2. read more here.
Keywords: highly integrated; thin film; integrated gete; film thermoelectric ... See more keywords