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Published in 2017 at "IEEE Photonics Technology Letters"
DOI: 10.1109/lpt.2017.2771222
Abstract: We demonstrate a narrow-linewidth heterogeneously integrated Si/III–V laser, where the current confinement in the III–V structure is obtained by oxide isolation rather than by the prevailing ion-implantation technique. This method provides effective electrical isolation as…
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Keywords:
heterogeneously integrated;
linewidth oxide;
oxide confined;
integrated iii ... See more keywords