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Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2936912
Abstract: A suspended AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO3) nanofilm modified gate was microfabricated and characterized for ppm-level acetone gas detection. The sensor featured a suspended circular membrane structure and…
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Keywords:
algan gan;
integrated microheater;
acetone;
gate ... See more keywords