CMOS fully integrated quasi‐circulator with self‐interference cancellation technique
Sign Up to like & getrecommendations! Published in 2019 at "Electronics Letters"
DOI: 10.1049/el.2018.8016
Abstract: In this Letter, the authors propose a novel fully integrable architecture for a quasi-circulator. It is comprised of an inductorless and wideband structure and off-chip components are not required. This solution is appropriate for use… read more here.
Keywords: quasi circulator; fully integrated; cmos fully; integrated quasi ... See more keywords
Demonstration of Integrated Quasi-Vertical DMOS Compatible with the Bipolar-CMOS-DMOS Process Achieving Ultralow RON,sp
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DOI: 10.3390/nano15030172
Abstract: An integrated quasi-vertical double-diffused MOSFET (DMOS) with split-gate trench (SGT) structure (SGT-QVDMOS), whose specific ON-state resistance (RON,sp) breaks the traditional Si limit significantly, is proposed and fabricated. The measured data of the latest manufactured device… read more here.
Keywords: integrated quasi; ron; dmos; quasi vertical ... See more keywords