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Published in 2017 at "Microsystem Technologies"
DOI: 10.1007/s00542-016-3219-2
Abstract: Piezoresistive acceleration sensors have found a wide range of applications for the last four decades. However, in recent times, high performance piezoresistive acceleration sensors with lower footprint are in demand, especially in the fields of… read more here.
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Published in 2019 at "Optics Communications"
DOI: 10.1016/j.optcom.2019.05.001
Abstract: Abstract We present a model to investigate the local change of the refractive index of a ferroelectric material employed as upper cladding of silicon photonic waveguides. The model is used to predict the saturation voltage… read more here.
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Published in 2020 at "ACS Photonics"
DOI: 10.1021/acsphotonics.0c01356
Abstract: The combination of hybrid nanowire photodetector on silicon photonic crystals has the potential to be both highly sensitive and ultrafast. A p-i-n nanowire was integrated into a silicon photonic cr... read more here.
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Published in 2022 at "IEEE Access"
DOI: 10.1109/access.2022.3179387
Abstract: The stagnation of Dennard scaling along with the move towards heterogeneous 2.5D and 3D ICs is increasing the thermal design power (TDP) envelopes of general-purpose CPUs. With conventional cooling approaches such as air-cooling and cold… read more here.
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Published in 2017 at "IEEE Journal of Selected Topics in Quantum Electronics"
DOI: 10.1109/jstqe.2016.2586458
Abstract: The optoelectronic properties of graphene attracted a lot of interest in recent years. Several demonstrations of integrated graphene based modulators, switches, detectors, and nonlinear devices have been reported. We present here a comprehensive study investigating… read more here.
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Published in 2021 at "Science"
DOI: 10.1126/science.abh2076
Abstract: Chip-based frequency combs The realization of optical frequency combs, light sources with precisely spaced frequencies across a broad spectrum of wavelengths, in dielectric microresonators has affected a range of applications from imaging and ranging to… read more here.
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Published in 2023 at "Optics express"
DOI: 10.1364/oe.478852
Abstract: By using the flip-chip bonding technology, a high performances 3D-integrated silicon photonics receiver is demonstrated. The receiver consists of a high-speed germanium-silicon (Ge-Si) photodetector (PD) and a commercial linear transimpedance amplifiers (TIA). The overall 3 dB… read more here.
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Published in 2022 at "Optics letters"
DOI: 10.1364/ol.446924
Abstract: A single-chip hybrid integrated silicon photonics transmitter based on passive alignment flip-chip bonding technology has been demonstrated. The transmitter is developed by the hybrid integration of a C-band slotted laser with 1 mm cavity length and… read more here.
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Published in 2018 at "Materials"
DOI: 10.3390/ma12010087
Abstract: III-V semiconductors are being considered as promising candidates to replace silicon channel for low-power logic and RF applications in advanced technology nodes. InGaAs is particularly suitable as the channel material in n-type metal-oxide-semiconductor field-effect transistors… read more here.