GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2720688
Abstract: GaN-based high electron mobility transistors (HEMTs) were fabricated on 200-mm silicon-on-insulator (SOI) substrates possessing multiple crystal orientations. These SOI substrates have the Si (100)-SiO2-Si (111) structure, which allows Si (111) to be exposed below the… read more here.
Keywords: integration; integration gan; gan devices; 200 platform ... See more keywords
Heterogeneous integration of a GaN-based photonic integrated circuit with an Si-based transimpedance amplifier.
Sign Up to like & getrecommendations! Published in 2023 at "Optics letters"
DOI: 10.1364/ol.481935
Abstract: The heterogeneous integration of a GaN-based photonic integrated circuit (PIC) and an Si-based transimpedance amplifier (TIA) is demonstrated in this work. The monolithic GaN PIC, fabricated from a GaN-on-Si light-emitting diode (LED) wafer, comprises LEDs… read more here.
Keywords: photonic integrated; gan based; circuit; based photonic ... See more keywords