Scalable Van Der Waals Integration of III‐N Devices Over 2D Materials for CMOS‐Compatible Architectures
Sign Up to like & getrecommendations! Published in 2025 at "Advanced Materials"
DOI: 10.1002/adma.202420060
Abstract: Advances in semiconductor technology have been primarily driven by exponentially reducing the size of silicon transistors and pushing the quantum limit. However, continued scaling becomes extremely difficult in accordance with Moore's law. Conversely, recent advances… read more here.
Keywords: integration; integration iii; van der; iii devices ... See more keywords
Heterogeneous and Monolithic 3D Integration of III-V-Based Radio Frequency Devices on Si CMOS Circuits.
Sign Up to like & getrecommendations! Published in 2022 at "ACS nano"
DOI: 10.1021/acsnano.2c00334
Abstract: Next-generation wireless communication such as sixth-generation (6G) and beyond is expected to require high-frequency, multifunctionality, and power-efficiency systems. A III-V compound semiconductor is a promising technology for high-frequency applications, and a Si complementary metal-oxide-semiconductor (CMOS)… read more here.
Keywords: heterogeneous monolithic; monolithic integration; frequency; integration ... See more keywords
Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxy.
Sign Up to like & getrecommendations! Published in 2018 at "Optics letters"
DOI: 10.1364/ol.43.003401
Abstract: We report for the first time on-chip integration of III-nitride voltage-controlled light emitters with visible and ultraviolet (UV) photodiodes (PDs). InGaN/GaN and AlGaN/GaN heterostructures were grown in specific regions by selective-area epitaxy, allowing monolithic integration… read more here.
Keywords: controlled light; integration iii; visible light; voltage controlled ... See more keywords