Heterogeneous and Monolithic 3D Integration of III-V-Based Radio Frequency Devices on Si CMOS Circuits.
Sign Up to like & getrecommendations! Published in 2022 at "ACS nano"
DOI: 10.1021/acsnano.2c00334
Abstract: Next-generation wireless communication such as sixth-generation (6G) and beyond is expected to require high-frequency, multifunctionality, and power-efficiency systems. A III-V compound semiconductor is a promising technology for high-frequency applications, and a Si complementary metal-oxide-semiconductor (CMOS)… read more here.
Keywords: heterogeneous monolithic; monolithic integration; frequency; integration ... See more keywords
Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxy.
Sign Up to like & getrecommendations! Published in 2018 at "Optics letters"
DOI: 10.1364/ol.43.003401
Abstract: We report for the first time on-chip integration of III-nitride voltage-controlled light emitters with visible and ultraviolet (UV) photodiodes (PDs). InGaN/GaN and AlGaN/GaN heterostructures were grown in specific regions by selective-area epitaxy, allowing monolithic integration… read more here.
Keywords: controlled light; integration iii; visible light; voltage controlled ... See more keywords