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Published in 2017 at "Optics express"
DOI: 10.1364/oe.25.005146
Abstract: We report the first monolithic integration of InGaAs channel field-effect transistors with InGaAs/GaAs multiple quantum wells (MQWs) lasers on a common platform, achieving a milestone in the path of enabling low power and high speed…
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Keywords:
lasers substrate;
integration ingaas;
fets lasers;
ingaas fets ... See more keywords