Facile 3D integration of Si nanowires on Bosch-etched sidewalls for stacked channel transistors.
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DOI: 10.1039/c9nr09000b
Abstract: Three-dimensional (3D) integration is a promising strategy to integrate more functions into a given footprint. In this work, we report on a convenient new strategy to grow and integrate high density Si nanowire (SiNW) arrays… read more here.
Keywords: channel transistors; facile integration; stacked channel; integration nanowires ... See more keywords