Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs
Sign Up to like & getrecommendations! Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12091403
Abstract: In this manuscript, the integration of a strained Ge channel with Si-based FinFETs was investigated. The main focus was the preparation of high-aspect-ratio (AR) fin structures, appropriate etching topography and the growth of germanium (Ge)… read more here.
Keywords: based finfets; integration strained; channel based; topography ... See more keywords