Growth and Properties of Intentionally Carbon‐Doped GaN Layers
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DOI: 10.1002/crat.201900129
Abstract: Carbon‐doping of GaN layers with thickness in the mm‐range is performed by hydride vapor phase epitaxy. Characterization by optical and electrical measurements reveals semi‐insulating behavior with a maximum of specific resistivity of 2 × 1010… read more here.
Keywords: growth properties; intentionally carbon; properties intentionally; carbon ... See more keywords