Diffusion and Interaction of In and As Implanted into SiO2 Films
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DOI: 10.1134/s1063782619080190
Abstract: By means of Rutherford backscattering spectrometry, electron microscopy, and energy-dispersive X-ray spectroscopy, the distribution and interaction of In and As atoms implanted into thermally grown SiO2 films to concentrations of about 1.5 at % are… read more here.
Keywords: sio2 films; interaction; interaction implanted; diffusion interaction ... See more keywords