Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation
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DOI: 10.1063/1.4983461
Abstract: The linear (LPGE) and circular photogalvanic effects (CPGE), induced by interband (532 nm) and intersubband (1064 nm) excitation, have been investigated in a temperature range from 77 to 300 K in GaAs/AlGaAs two-dimensional electron gas. The temperature dependences… read more here.
Keywords: temperature; intersubband; interband intersubband; intersubband excitation ... See more keywords