Influence of Intercell Trapped Charge on Vertical NAND Flash Memory
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DOI: 10.1109/led.2016.2643278
Abstract: The influence of intercell trapped charge (ITC)—the charge trapped at the inter-cell nitride regions by fringe electric fields during program and erase operations—on vertical NAND (VNAND) flash memory is investigated. In addition to conventional degradation… read more here.
Keywords: trapped charge; influence intercell; flash memory; intercell trapped ... See more keywords