Thermal stability of interface dipole modulation in atomic layer-deposited HfO2/SiO2 multi-stack structures
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DOI: 10.1063/5.0015348
Abstract: In this paper, we report on an interface dipole modulation (IDM) loss occurring in HfO2/atomically thin TiO2/SiO2 stack structures prepared by atomic layer deposition (ALD). The IDM characteristic, which is observed as a capacitance–voltage (C–V)… read more here.
Keywords: stack; hfo2 sio2; atomic layer; interface dipole ... See more keywords
Observation of interface dipole modulation in an Al2O3/SnOx/SiO2 stack
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DOI: 10.1063/5.0259875
Abstract: Interface dipole modulation (IDM) has predominantly used TiO2 as the IDM layer, and changes in the valence state of TiO2 critically affect device operation. This study demonstrates the use of SnOx instead of TiOx for… read more here.
Keywords: interface dipole; dipole modulation; snox; snox sio2 ... See more keywords