Electron transport at the interface of organic semiconductors and hydroxyl-containing dielectrics
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DOI: 10.1039/c8tc01343h
Abstract: Dielectric material design is challenging for the fabrication of n-channel organic field-effect transistors (OFETs). Hydroxyl groups in dielectrics have been found to intensively trap electrons and completely eliminate electron transport in a variety of structurally… read more here.
Keywords: hydroxyl containing; semiconductors hydroxyl; interface organic; electron transport ... See more keywords