Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors
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DOI: 10.1021/acsami.2c21669
Abstract: Memristors implemented as resistive random-access memories (RRAMs) owing to their low power consumption, scalability, and speed are promising candidates for in-memory computing and neuromorphic applications. Moreover, a vertical 3D implementation of RRAMs enables high-density crossbar… read more here.
Keywords: effects interface; noise; noise properties; interface oxidation ... See more keywords