Effect of p-n interface on resistive switching of NiO/CeO2 thin films
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DOI: 10.1016/j.jallcom.2018.04.186
Abstract: Abstract To investigate how the p−n interface affects the resistive switching, we studied bilayer and nanocomposite films composed of p−type NiO and n−type CeO2. The samples were fabricated on ITO substrate by sol−gel spin coating.… read more here.
Keywords: interface resistive; switching nio; interface; ceo2 ... See more keywords