Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-016-5262-2
Abstract: We report results on the interface trap density (Dit) of 4H- and 6H-SiC metal–oxide–semiconductor (MOS) capacitors with different interface chemistries. In addition to pure dry oxidation, we studied interfaces formed by annealing thermal oxides in… read more here.
Keywords: mos capacitors; nitrogen phosphorus; interface trap; dit ... See more keywords
Investigation of interface trap charges and temperature variation in heterostacked-TFET
Sign Up to like & getrecommendations! Published in 2020 at "Indian Journal of Physics"
DOI: 10.1007/s12648-020-01834-z
Abstract: This paper analyzes the reliability issues of the Heterostacked-TFET (HS-TFET) in detail. The investigation of the device reliability is carried out by examining the effect of interface trap charges (ITCs) and the temperature affectability of… read more here.
Keywords: heterostacked tfet; variation; interface trap; trap ... See more keywords
Demonstration of 2e12cm2eV1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5nm EOT
Sign Up to like & getrecommendations! Published in 2017 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2017.05.006
Abstract: This study reports on the low interface trap density obtained from MOS capacitors and transistors with 2.5nm EOT using MoS2 flakes in back-gated configuration. Design ideology to measure thin flake structures is explained. CV measurements… read more here.
Keywords: 5nm eot; interface trap; trap density;
Simulation study on the influence of metal contact and MOS interface trap states on the electrical characteristics of SiC IGBT
Sign Up to like & getrecommendations! Published in 2023 at "AIP Advances"
DOI: 10.1063/5.0144550
Abstract: A 13 kV class n-channel 4H–SiC trench gate insulated gate bipolar transistor (IGBT) structure is designed based on Silvaco TCAD device simulator tool. The influence of metal/SiC and SiC MOS interface trap states on the static… read more here.
Keywords: mos interface; interface trap; trap states; interface ... See more keywords
Near-Interface Trap Model for the Low Temperature Conductance Signal in SiC MOS Capacitors With Nitrided Gate Oxides
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3011661
Abstract: The low channel-carrier mobility in commercial SiC MOSFETs has been attributed to fast electron traps labeled “NI.” These traps exhibit anomalous behavior compared to other interface trap signals. Furthermore, the electrical parameters extracted from a… read more here.
Keywords: interface trap; mos capacitors; interface; conductance ... See more keywords
Impact of Interface Trap Charges on the Electrical Characteristics of Back-Gated 2D Negative Capacitance (NC) FET
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Nanotechnology"
DOI: 10.1109/tnano.2019.2950668
Abstract: In this letter, a fully analytical compact drain current model of back-gated two-dimensional (2D) negative capacitance (NC) FET including interface trap charges has been developed by solving Poisson's, drift-diffusion and 1-D Landau-Khalatnikov equations, and it… read more here.
Keywords: back gated; interface trap; interface; trap charges ... See more keywords
Evidence of Interface Trap Build-Up in Irradiated 14-nm Bulk FinFET Technologies
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2021.3065267
Abstract: Total ionizing dose response of 14-nm bulk-Si FinFETs has been studied with a specially designed test chip. The radiation testing shows evidence of interface trap build-up on 14-nm Bulk FinFET technologies. These defects created in… read more here.
Keywords: bulk finfet; evidence interface; finfet technologies; interface trap ... See more keywords
Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in β-Ga2O3 Field-Effect Transistors
Sign Up to like & getrecommendations! Published in 2021 at "Nanomaterials"
DOI: 10.3390/nano11020494
Abstract: Interface traps between a gate insulator and beta-gallium oxide (β-Ga2O3) channel are extensively studied because of the interface trap charge-induced instability and hysteresis. In this work, their effects on mobility degradation at low temperature and… read more here.
Keywords: temperature; mobility; hysteresis; trap induced ... See more keywords
Impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Express"
DOI: 10.7567/1882-0786/aaf283
Abstract: The impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities were examined by a method that utilizes Hall effect measurements and split capacitance–voltage measurements to clarify the mechanism of… read more here.
Keywords: interface trap; impact crystal; sio2 sic; trap densities ... See more keywords