The effect of oxide layer thickness on the quantification of 1.5 MeV γ–radiation induced interface traps in the Ag/SiO2/Si MOS devices
Sign Up to like & getrecommendations! Published in 2017 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2017.05.026
Abstract: Abstract This work presents the effect of varied thickness of oxide layer and radiation dose on electrical characteristics of Ag/SiO2/Si MOS devices irradiated by 1.5 MeV γ–radiations of varied doses. SiO2 layers of 50, 100, 150… read more here.
Keywords: layer; mos devices; oxide layer; interface traps ... See more keywords
Quantified density of performance-degrading near-interface traps in SiC MOSFETs
Sign Up to like & getrecommendations! Published in 2022 at "Scientific Reports"
DOI: 10.1038/s41598-022-08014-5
Abstract: Characterization of near-interface traps (NITs) in commercial SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact both performance and reliability by reducing the channel carrier mobility and causing threshold-voltage drift. In this work,… read more here.
Keywords: density; performance; near interface; interface traps ... See more keywords
Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0146549
Abstract: Interface traps generally are not considered to be likely sources of low-frequency (LF) noise and/or random telegraph noise (RTN) in metal–oxide–semiconductor (MOS) devices because the longer carrier exchange times of border traps are more consistent… read more here.
Keywords: noise; metal oxide; low frequency; frequency noise ... See more keywords
The Role of Near-Interface Traps in Modulating the Barrier Height of SiC Schottky Diodes
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2896216
Abstract: The role of traps in the operation of Schottky barrier diodes is poorly understood. To explore this, SiC Schottky barrier diodes with a high density of near-interface traps were intentionally fabricated. By applying forward current… read more here.
Keywords: sic schottky; near interface; role; barrier height ... See more keywords
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-of-the-Roadmap III–V MOSFETs
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.2974966
Abstract: Thanks to their superior transport properties, indium gallium arsenide (InGaAs) metal–oxide–semiconductor field-effect transistors (MOSFETs) constitute an alternative to conventional silicon MOSFETs for digital applications at ultrascaled nodes. The successful integration of this technology is challenged… read more here.
Keywords: electrostatics transport; systematic modeling; variability; electrostatics ... See more keywords
Analytical Model for Interface Traps-Dependent Back Bias Capability and Variability in Ultrathin Body and Box FDSOI MOSFETs
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3025979
Abstract: Independent back bias in the ultrathin body and Box (UTBB) fully depleted silicon-on-insulator (FDSOI) serves as the critical knob for exploiting the performance and power tradeoffs and process/aging compensation. The effectiveness of back bias is… read more here.
Keywords: variability; ultrathin body; back bias; interface traps ... See more keywords