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   Articles with "interface traps" as a keyword



The effect of oxide layer thickness on the quantification of 1.5 MeV γ–radiation induced interface traps in the Ag/SiO2/Si MOS devices

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recommendations! Published in 2017 at "Materials Science in Semiconductor Processing"

DOI: 10.1016/j.mssp.2017.05.026

Abstract: Abstract This work presents the effect of varied thickness of oxide layer and radiation dose on electrical characteristics of Ag/SiO2/Si MOS devices irradiated by 1.5 MeV γ–radiations of varied doses. SiO2 layers of 50, 100, 150… read more here.

Keywords: layer; mos devices; oxide layer; interface traps ... See more keywords

Quantified density of performance-degrading near-interface traps in SiC MOSFETs

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recommendations! Published in 2022 at "Scientific Reports"

DOI: 10.1038/s41598-022-08014-5

Abstract: Characterization of near-interface traps (NITs) in commercial SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact both performance and reliability by reducing the channel carrier mobility and causing threshold-voltage drift. In this work,… read more here.

Keywords: density; performance; near interface; interface traps ... See more keywords

Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors

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recommendations! Published in 2023 at "Applied Physics Letters"

DOI: 10.1063/5.0146549

Abstract: Interface traps generally are not considered to be likely sources of low-frequency (LF) noise and/or random telegraph noise (RTN) in metal–oxide–semiconductor (MOS) devices because the longer carrier exchange times of border traps are more consistent… read more here.

Keywords: noise; metal oxide; low frequency; frequency noise ... See more keywords

Analyzing Interface Trap Influence on Sensitivity, Noise, and Response Time in 2-D Material Field-Effect Transistor pH Sensors: A Theoretical Framework

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recommendations! Published in 2024 at "IEEE Sensors Journal"

DOI: 10.1109/jsen.2024.3472729

Abstract: This work evaluates the potential impact of interface traps on the interface of oxide and semiconductor on a 2-D-based ion-sensitive field-effect transistor (ISFET) using a surface potential-based model and Technology Computer-Aided Design (TCAD) simulation calibrated… read more here.

Keywords: effect; inline formula; interface traps; tex math ... See more keywords

The Role of Near-Interface Traps in Modulating the Barrier Height of SiC Schottky Diodes

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recommendations! Published in 2019 at "IEEE Transactions on Electron Devices"

DOI: 10.1109/ted.2019.2896216

Abstract: The role of traps in the operation of Schottky barrier diodes is poorly understood. To explore this, SiC Schottky barrier diodes with a high density of near-interface traps were intentionally fabricated. By applying forward current… read more here.

Keywords: sic schottky; near interface; role; barrier height ... See more keywords

Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-of-the-Roadmap III–V MOSFETs

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recommendations! Published in 2020 at "IEEE Transactions on Electron Devices"

DOI: 10.1109/ted.2020.2974966

Abstract: Thanks to their superior transport properties, indium gallium arsenide (InGaAs) metal–oxide–semiconductor field-effect transistors (MOSFETs) constitute an alternative to conventional silicon MOSFETs for digital applications at ultrascaled nodes. The successful integration of this technology is challenged… read more here.

Keywords: electrostatics transport; systematic modeling; variability; electrostatics ... See more keywords

Analytical Model for Interface Traps-Dependent Back Bias Capability and Variability in Ultrathin Body and Box FDSOI MOSFETs

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recommendations! Published in 2020 at "IEEE Transactions on Electron Devices"

DOI: 10.1109/ted.2020.3025979

Abstract: Independent back bias in the ultrathin body and Box (UTBB) fully depleted silicon-on-insulator (FDSOI) serves as the critical knob for exploiting the performance and power tradeoffs and process/aging compensation. The effectiveness of back bias is… read more here.

Keywords: variability; ultrathin body; back bias; interface traps ... See more keywords

New Evidence for Nonradiative Recombination Enhanced Defect Reaction Effect at Si-SiO₂ Interface Traps

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recommendations! Published in 2025 at "IEEE Transactions on Electron Devices"

DOI: 10.1109/ted.2025.3532410

Abstract: The evolution states of Si-SiO2 interface traps have been attracting much attention, but there are few reports on the recombination enhanced defect reaction (REDR) effect at interface traps. Here, the REDR effect is studied at… read more here.

Keywords: recombination enhanced; effect; interface traps; interface ... See more keywords