In-Plane Amorphous-Oxide Ionotronic Devices and Circuits with Photochemically Enabled Favorable Interfaces.
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DOI: 10.1021/acsami.0c11548
Abstract: Here, we demonstrate side-gated in-plane structure of solution-processed amorphous oxide semiconductor (AOS) ionotronic devices and logic circuits enabled by ion-gel gate dielectrics with monolithically integrated nanoscale passivation architecture. The large capacitance of electric double layer… read more here.
Keywords: ion gel; passivation; interfaces plane; amorphous oxide ... See more keywords